71V65803S100BGG

Overview

The IDT71V65803S100BGG is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Integrated Device Technology, now part of Renesas Electronics. It features a 9-megabit storage capacity organized as 512K words by 18 bits. The device operates with a parallel interface and supports clock frequencies up to 100 MHz, achieving a typical access time of 5 nanoseconds. It utilizes a 3.3-volt core power supply with a specified operating voltage range of 3.135V to 3.465V. The component is housed in a 119-ball plastic ball grid array (PBGA) package measuring 14x22 mm. Designed for high-performance applications, it employs Zero Bus Turnaround (ZBT) technology to eliminate dead cycles between read and write operations.

Feature Summary

• Zero Bus Turnaround (ZBT) technology eliminates dead cycles between read and write transitions, enhancing system throughput.
• Fully pipelined architecture with positive clock-edge triggered address, data, and control registers for high-speed operation.
• Internal synchronization of the output buffer enable signal removes the requirement for external control of the OE pin.
• Supports four-word burst capabilities with selectable interleaved or linear modes via an internal burst address counter.

Applications

• High-performance computing systems requiring fast data buffering
• Network infrastructure equipment such as routers and switches
• Industrial automation controllers needing rapid memory access
• Telecommunications base stations and signal processing units

Procurement Notes

Verify current availability status as this component may be subject to end-of-life notices or discontinuation. Confirm that the specific suffix matches the required package type and temperature rating. Ensure compatibility with existing board layouts regarding the 119-PBGA footprint. Check for RoHS compliance requirements relative to the manufacturing date code. Consult official Renesas documentation for any product change notices affecting electrical characteristics or pin assignments.

Selection Notes

Select this component when a 9Mb synchronous SRAM with a 18-bit data width is required. Ensure the design supports a 3.3V core voltage and accommodates the 119-ball BGA package constraints. Verify that the system clock frequency does not exceed 100 MHz to maintain the 5 ns access specification. Consider thermal management solutions suitable for surface-mount installation in industrial or commercial temperature ranges.

Part Context

This device belongs to the IDT 71V65803 family of synchronous ZBT SRAMs. The family offers various speed grades and package options, including TQFP and CBGA variants. The 100 MHz speed grade represents a balance between performance and power consumption. These components are widely used in embedded systems where deterministic memory access times are critical for real-time processing tasks.

Replacement Considerations

Check for direct substitutes within the 71V65803 series offering different speed grades or packages. Verify if alternative manufacturers provide electrically compatible parts with identical pinouts and timing parameters. Ensure any replacement maintains the same 18-bit data width and 3.3V operating voltage specifications.