71V65803S100BGGI

71V65803S100BGGI

$20.23
  • Description:IC SRAM 9MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:5ee6ad84cea4 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 9MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:9Mbit
  • Memory Organization:512K x 18
  • Memory Interface:Parallel
  • Clock Frequency:100 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:5 ns

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71V65803S100BGGI

Overview

The 71V65803S100BGGI is a synchronous Single Data Rate (SDR) Zero Bus Turnaround (ZBT) Static Random Access Memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 9 Megabits, organized as 512K words by 18 bits. The device operates with a maximum clock frequency of 100 MHz and features a typical access time of 5 ns. It requires a supply voltage range of 3.135V to 3.465V and is designed for commercial operating temperatures between 0°C and 70°C. The component is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 mm.

Feature Summary

  • Supports high-performance system speeds through synchronous parallel interface technology
  • Utilizes Zero Bus Turnaround (ZBT) architecture to maximize data throughput efficiency
  • Features pipelined SRAM structure for consistent access latency

Applications

  • High-speed digital signal processing systems
  • Network infrastructure equipment requiring fast memory buffering
  • Industrial control systems with strict timing requirements

Procurement Notes

Verify the specific suffix BGGI to confirm the 119-PBGA package variant. Confirm RoHS3 compliance status for current production lots. Check for End-of-Life notices or alternative recommendations from Renesas due to potential obsolescence. Ensure voltage levels match the 3.135V to 3.465V specification during integration.

Selection Notes

Select this component when a 9Mb synchronous SRAM with ZBT support is required. The 100 MHz speed grade suits applications needing 5 ns access times. The 18-bit word width is suitable for error correction code implementations. Compare against the IDT71V65802 series if different pin counts or legacy packages are acceptable.

Part Context

This part belongs to the 71V65803 family of synchronous ZBT SRAMs. It shares architectural similarities with the IDT71V65802 series but differs in packaging and specific electrical characteristics. The 71V65803 series is designed to replace older asynchronous memories in high-speed embedded systems.

Replacement Considerations

The IDT71V65802S100BQ is listed as a similar alternative, though it uses a 165-CABGA package. Verify pin compatibility and package dimensions before substitution.

71V65803S100BGGI71V65803S100BGGI
$20.23
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