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Product Detailed Parameters
- Description:IC SRAM 9MBIT PAR 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:512K x 18
- Memory Interface:Parallel
- Clock Frequency:100 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:5 ns
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Overview
The 71V65803S100BGGI8 is a synchronous Single Data Rate (SDR) Zero Bus Turnaround (ZBT) Static Random Access Memory (SRAM) manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 9 Megabits, organized as 512K words by 18 bits. The device supports parallel interface operations with a maximum clock frequency of 100 MHz and features a typical access time of 5 nanoseconds. It operates within a supply voltage range of 3.135V to 3.465V and is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 mm. The component is rated for commercial operating temperatures between 0°C and 70°C.
Feature Summary
- Supports high-speed synchronous data transfer using Zero Bus Turnaround technology to minimize bus turnaround latency.
- Integrates pipelined architecture to maintain throughput at clock frequencies up to 100 MHz.
- Features a compact 119-ball PBGA surface-mount package suitable for dense board layouts.
Applications
- High-performance embedded systems requiring fast memory access
- Industrial equipment control units
- Network infrastructure hardware
Procurement Notes
Verify the specific suffix 'GI8' against official Renesas documentation, as standard listings often reference 'BGG8'. Confirm current availability status, as this product line may be subject to discontinuation notices. Ensure compatibility with existing PCB footprints and reflow profiles for the 119-PBGA package during integration.
Selection Notes
Select this component when a 9Mb density with 18-bit word width is required for synchronous applications. The ZBT feature set is critical for designs needing reduced bus turnaround times compared to standard synchronous SRAMs. Verify that the system power supply can maintain the specified 3.135V to 3.465V range for reliable operation.
Part Context
This part belongs to the 71V65803 family of high-density synchronous SRAMs from Renesas. It shares architectural similarities with other members like the 71V65803S100BGG8 but differs in packaging or environmental rating suffixes. The family is designed for applications demanding high bandwidth and low latency in a compact form factor.
Replacement Considerations
Direct substitutes include the 71V65803S100BGG8. Verify pinout and electrical specifications match before substitution. Other variants in the 71V65803 series may offer different temperature ranges or packaging options.
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