71V65803S100BGI

71V65803S100BGI

$20.23
  • Description:IC SRAM 9MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:131efde54f23 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 9MBIT PAR 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:9Mbit
  • Memory Organization:512K x 18
  • Memory Interface:Parallel
  • Clock Frequency:100 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:5 ns

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71V65803S100BGI

Overview

The Renesas Electronics Corporation 71V65803S100BGI is a synchronous single data rate zero bus turnaround (ZBT) static random-access memory (SRAM) integrated circuit. It provides a total storage capacity of 9 Mbit, organized as 512K words by 18 bits. The device operates with a maximum clock frequency of 100 MHz and features a typical access time of 5 ns. It utilizes a parallel interface and requires a supply voltage range of 3.135 V to 3.465 V. The component is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 mm.

Feature Summary

  • Supports high-performance system speeds through synchronous operation with zero bus turnaround capability
  • Designed to eliminate dead bus cycles during read-to-write or write-to-read transitions
  • Utilizes advanced CMOS technology for low power consumption and high density

Applications

  • High-speed data buffering in telecommunications equipment
  • Cache memory in network routers and switches
  • Digital signal processing systems requiring fast access times

Procurement Notes

Verify the specific suffix BGI against official Renesas documentation to confirm pinout and package dimensions. Confirm availability status as this series may have end-of-life notifications. Ensure compatibility with 3.3V logic levels and check for moisture sensitivity handling requirements prior to assembly.

Selection Notes

Select this component when a 512K x 18 configuration is required for synchronous parallel SRAM applications. Compare against the 71V65603 series if a 256K x 36 organization is needed instead. Ensure the design supports the 119-PBGA footprint and thermal requirements for the specified operating temperature range.

Part Context

This part belongs to the 71V65803 family of ZBT synchronous SRAMs from Renesas. It shares architectural similarities with other members like the 71V65803S100BG8 but differs in package type and specific suffix coding. The family is designed for embedded applications demanding high bandwidth and low latency.

Replacement Considerations

Official substitutes include the 71V65803S100BG8 and 71V65803S100BGG within the same family, provided the package differences are accommodated. Verify pin compatibility before substitution.

71V65803S100BGI71V65803S100BGI
$20.23
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