71V65803S100BGI8

Overview

The Renesas Electronics Corporation 71V65803S100BGI8 is a synchronous single data rate (SDR) zero bus turnaround (ZBT) static random-access memory (SRAM) integrated circuit. It provides a total storage capacity of 9 megabits, organized as 512 kilowords by 18 bits. The device operates with a maximum clock frequency of 100 MHz and features a typical access time of 5 nanoseconds. It requires a supply voltage range between 3.135 volts and 3.465 volts. The component is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14 by 22 millimeters. It supports parallel interface communication and is rated for an operating temperature range from 0°C to 70°C.

Feature Summary

• Supports synchronous single data rate operation with zero bus turnaround capability for efficient data transfer.
• Utilizes a pipelined architecture to achieve high-speed performance at 100 MHz clock frequencies.
• Features a 18-bit wide data interface suitable for applications requiring error correction or parity checking.

Applications

• High-performance embedded systems requiring fast local memory access
• Network infrastructure equipment such as routers and switches
• Industrial control systems needing reliable volatile storage

Procurement Notes

Verify the specific suffix BGI8 against official Renesas documentation to confirm package type and temperature grade. Confirm RoHS compliance status as it varies by manufacturing date and region. Check for End-of-Life notifications, as this component family has been subject to discontinuance notices. Ensure compatibility with existing PCB footprints for the 119-PBGA(14x22) configuration before procurement.

Selection Notes

Select this component when a 9Mb capacity with 18-bit word width is required for synchronous parallel interfaces. Compare against the 71V65603 series if a 36-bit width is needed instead. Verify that the 0°C to 70°C commercial temperature range meets system environmental requirements. Consider the 119-PBGA package constraints for board space and thermal management during design integration.

Part Context

This part belongs to the IDT/Renesas 71V65803 family of high-speed ZBT SRAMs. It shares architectural similarities with other members like the 71V65803S133BGI8, which offers higher speed but may differ in timing characteristics. The family is designed for applications demanding low latency and high throughput in parallel memory subsystems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Renesas official channels for current obsolescence management and recommended alternatives.