— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC SRAM 9MBIT PAR 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:512K x 18
- Memory Interface:Parallel
- Clock Frequency:100 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:5 ns
Download product information
Overview
The Renesas Electronics Corporation 71V65803S100BQ is a synchronous Single Data Rate Zero Bus Turnaround (ZBT) Static Random Access Memory (SRAM) integrated circuit. It features a storage capacity of 9 Megabits, organized as 512K words by 18 bits. The device operates with a maximum clock frequency of 100 MHz and provides an access time of 5 nanoseconds. It utilizes a parallel interface and requires a supply voltage ranging from 3.135 Volts to 3.465 Volts. The component is housed in a 165-pin Ceramic Ball Grid Array (CABGA) package measuring 13x15 millimeters.
Feature Summary
- Zero Bus Turnaround architecture eliminates dead bus cycles during read-to-write or write-to-read transitions.
- Registers address, data-in, and control signals for synchronous operation.
- Flow-through output configuration without output data registers.
- Supports burst mode providing four cycles of data for a single address.
Applications
- High-performance embedded systems requiring fast memory access
- Industrial networking equipment
- Telecommunications infrastructure
Procurement Notes
Verify the specific suffix BQ against official Renesas documentation to confirm pinout and electrical characteristics. Confirm RoHS compliance status as historical batches may vary. Check current availability through authorized distributors, as this part number may be subject to end-of-life notices or limited stock conditions.
Selection Notes
Select this component when a 9Mb synchronous SRAM with 100MHz performance is required. Ensure the design accommodates the 165-CABGA footprint. Verify that the system logic supports ZBT protocols and 3.3V I/O levels. Consider the 5ns access time for timing closure in high-speed parallel interfaces.
Part Context
This device belongs to the IDT 71V65803 family of synchronous ZBT SRAMs. It shares architectural similarities with other members like the 71V65803S133BQI but differs in speed grade. The family is designed for applications demanding high throughput and low latency in parallel memory environments.
Replacement Considerations
The 71V65803S133BQI is a documented similar replacement offering higher speed at 133 MHz. Verify pin compatibility and timing requirements before substitution.
ChipApex | Global Electronic Components Supplier







