71V65803S100BQG

Memory IC Overview

The 71V65803S100BQG is a synchronous Single Data Rate (SDR) Zero Bus Turnaround (ZBT) Static Random Access Memory (SRAM) manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 9 Megabits, organized as 512K words by 18 bits. The device supports a maximum clock frequency of 100 MHz with a typical access time of 5 nanoseconds. It operates within a supply voltage range of 3.135V to 3.465V and is housed in a 165-pin Ceramic Ball Grid Array (CABGA) package measuring 13x15 mm. The component is designed for surface mount installation and functions within an ambient temperature range of 0°C to 70°C.

Memory IC Feature Summary

• Supports high-speed parallel data transfer via a ZBT interface architecture that eliminates turnaround latency between read and write cycles.
• Utilizes synchronous pipeline logic to achieve fast access times at elevated clock frequencies.
• Integrates on-chip data masking capabilities for precise byte-level write operations.

Memory IC Applications

• High-performance embedded systems requiring low-latency memory access
• Industrial automation controllers and signal processing units
• Telecommunications infrastructure equipment

Memory IC Procurement Notes

Verify the specific suffix designation against official manufacturer documentation to confirm pin compatibility and electrical characteristics. Confirm RoHS compliance status as manufacturing processes may vary. Check for End-of-Life notices or Product Change Notifications regarding substrate or labeling updates before finalizing procurement plans.

Memory IC Selection Notes

Select this component when system requirements demand high bandwidth and deterministic timing for 18-bit wide data paths. Ensure the design accommodates the thermal dissipation requirements of the CABGA package. Verify that the host controller supports the necessary control signals for synchronous ZBT operation and appropriate voltage regulation.

Memory IC Part Context

This part belongs to the 71V65803 family of high-density SRAM devices. It shares architectural similarities with other members of the series but differs in packaging and speed grade. The 100MHz speed bin distinguishes it from slower variants, offering enhanced throughput for demanding real-time applications while maintaining standard 3.3V logic levels.

Memory IC Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify that any replacement maintains identical pinout, voltage specifications, and timing parameters to ensure seamless integration without hardware redesign.