71V65803S100BQG8

71V65803S100BQG8

$17.12
  • Description:IC SRAM 9MBIT PAR 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:19b92c42f423 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 9MBIT PAR 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:9Mbit
  • Memory Organization:512K x 18
  • Memory Interface:Parallel
  • Clock Frequency:100 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-TBGA
  • Supplier Device Package:165-CABGA (13x15)
  • Access Time:5 ns

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71V65803S100BQG8

Overview

The 71V65803S100BQG8 is a synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 9 megabits, organized as 512 kilowords by 18 bits. The device supports parallel interface operations with a maximum clock frequency of 100 MHz and features a typical access time of 5 nanoseconds. It operates within a supply voltage range of 3.135 volts to 3.465 volts and is designed for commercial temperature environments ranging from 0°C to 70°C. The component is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 millimeters.

Feature Summary

  • Supports high-speed synchronous parallel data transfer with pipelined architecture
  • Provides dense 9-megabit storage capacity in a compact surface-mount package
  • Operates on standard 3.3-volt logic levels for system compatibility

Applications

  • High-performance embedded systems requiring fast data buffering
  • Industrial equipment control units needing reliable volatile memory
  • Telecommunications infrastructure hardware

Procurement Notes

Verify the exact suffix BQG8 against official Renesas documentation to confirm pinout and substrate specifications. Confirm RoHS compliance status and moisture sensitivity level requirements prior to assembly. Check for end-of-life notices or production change notifications that may affect long-term availability. Ensure ordering quantities align with manufacturer packaging standards.

Selection Notes

Select this component when a 9-megabit synchronous SRAM with 5-nanosecond access speed is required. The 119-PBGA package suits applications with space constraints and high-density board layouts. Verify that the 3.3-volt operating voltage matches the target system power rails. Consider the commercial temperature range suitability for the intended operational environment.

Part Context

This part belongs to the 71V65803 family of synchronous SRAM devices from Renesas Electronics. The family offers various speed grades and package options to accommodate different performance and form-factor requirements. These components are designed for applications demanding high-speed data processing and low-latency memory access in industrial and commercial electronics.

Replacement Considerations

Consult official Renesas substitution guides for verified alternatives. Cross-reference pinouts and electrical characteristics carefully before replacing.

71V65803S100BQG871V65803S100BQG8
$17.12
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