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Product Detailed Parameters
- Description:IC SRAM 9MBIT PAR 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:512K x 18
- Memory Interface:Parallel
- Clock Frequency:100 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:5 ns
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Overview
The Renesas Electronics Corporation 71V65803S100BQI is a synchronous Single Data Rate Zero Bus Transition SRAM IC with a total storage capacity of 9 Megabits. The memory organization is structured as 512K words by 18 bits, utilizing a parallel interface. It operates at a maximum clock frequency of 100 MHz with an access time of 5 nanoseconds. The device requires a supply voltage ranging from 3.135V to 3.465V and supports an industrial operating temperature range of -40°C to +85°C. It is housed in a 165-CABGA package measuring 13x15 millimeters.
Feature Summary
- Supports high-speed data transfer via a 100 MHz synchronous parallel interface
- Utilizes Zero Bus Transition technology to reduce power consumption and signal noise
- Provides reliable operation within the industrial temperature range of -40°C to +85°C
Applications
- High-performance embedded systems requiring fast random access memory
- Industrial control units and automation equipment
- Telecommunications infrastructure hardware
- Network switching and routing devices
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status as it may vary by production batch. Check for specific packaging requirements such as tray quantities. Ensure compatibility with existing PCB footprints and soldering profiles. Validate that the lead-free designation matches project specifications before finalizing orders.
Selection Notes
Select this component when a 9Mb synchronous SRAM with a 165-pin BGA footprint is required. Compare against other speed grades within the 71V65803 family based on system timing constraints. Consider the 18-bit data width for applications needing wide data buses without external multiplexing. Evaluate thermal management needs given the industrial temperature rating and power dissipation characteristics of the CABGA package.
Part Context
This part belongs to the IDT 71V65803 series of synchronous ZBT SRAMs manufactured by Renesas Electronics. The series offers various speed grades and package options to suit different design requirements. The 71V65803S100BQI specifically represents the 100 MHz performance tier in the 165-CABGA form factor, providing a balance between speed and pin count for dense board layouts.
Replacement Considerations
The 71V65803S133BQI is a documented substitute offering higher speed performance within the same package.
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