71V65803S100PFG8

Overview

The Renesas Electronics Corporation 71V65803S100PFG8 is a synchronous Single Data Rate (SDR) Zero Bus Turnaround (ZBT) Static Random Access Memory (SRAM) integrated circuit. It provides a total storage capacity of 9 Megabits, organized as 512K words by 18 bits. The device supports a maximum clock frequency of 100 MHz with a typical access time of 5 nanoseconds. It operates within a supply voltage range of 3.135V to 3.465V and is housed in a 100-pin Thin Quad Flat Package (TQFP).

Feature Summary

• Supports high-speed parallel data transfer via a ZBT interface architecture.
• Utilizes synchronous SDR technology for efficient pipeline operation.
• Designed for surface-mount installation on printed circuit boards.

Applications

• High-performance embedded memory systems requiring fast access times.
• Industrial networking equipment utilizing parallel bus interfaces.
• Telecommunications infrastructure components.

Procurement Notes

Verify component authenticity through authorized channels due to potential availability constraints. Confirm package integrity upon receipt, as moisture sensitivity requires proper handling. Review the manufacturer's Product Change Notification (PCN) records for any updates regarding substrate materials or labeling changes that may affect integration.

Selection Notes

Select this component when a 9Mb density with 18-bit word width is required. Ensure the design accommodates the specific 3.3V logic levels and TQFP-100 footprint. Verify that the system timing requirements align with the 5ns access specification and 100MHz operational limit.

Part Context

This part belongs to the IDT 71V65803 family of synchronous SRAM devices. It represents a transition from asynchronous designs to high-speed pipelined architectures. The component serves as a bridge between standard SRAM densities and faster memory solutions for bandwidth-intensive applications.

Replacement Considerations

Consult official substitution lists for equivalent performance. Verify pin compatibility and electrical specifications before replacing. Cross-reference datasheets to ensure functional parity in the target application environment.