71V65803S100PFGI8

Overview

The 71V65803S100PFGI8 is a synchronous single data rate zero bus turnaround SRAM manufactured by Renesas Electronics Corporation. It provides a storage capacity of 9 Mbit organized as 512K x 18 bits. The device supports parallel interface operations with a maximum clock frequency of 100 MHz and features a typical access time of 5 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and is designed for surface mount installation in a 100-TQFP package measuring 14x20 mm. The component functions reliably across an ambient temperature range of 0°C to 70°C.

Feature Summary

• Supports high-speed synchronous parallel data transfer with zero bus turnaround capability for efficient bandwidth utilization.
• Integrates pipelined architecture to maintain continuous data throughput at clock frequencies up to 100 MHz.
• Operates on a standard 3.3 V power supply rail, ensuring compatibility with common logic families.

Applications

• High-performance embedded memory systems requiring fast random access.
• Network infrastructure equipment utilizing pipeline buffer storage.
• Industrial control units needing reliable volatile data retention.

Procurement Notes

Verify the specific suffix PFGI8 against official Renesas documentation to confirm package type and temperature grade. Confirm current availability status as discontinuance notices may affect long-term sourcing. Ensure compliance with RoHS3 specifications if required by project standards. Cross-reference pinouts with the official datasheet before PCB layout finalization.

Selection Notes

Select this component when a 9 Mbit density with 18-bit word width is required for synchronous applications. The 100-TQFP package offers a suitable footprint for dense board layouts compared to BGA options. Consider the 5 ns access time for timing-critical paths where pipeline latency must be minimized. Evaluate thermal dissipation requirements for the TQFP enclosure under maximum load conditions.

Part Context

This part belongs to the IDT/Renesas 71V65803 family of synchronous ZBT SRAMs. It shares architectural similarities with other members like the 71V65803S100BGG8 but differs in packaging technology. The family targets applications demanding high-speed data buffering and low-latency memory access in telecommunications and computing environments.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Verify functional equivalence with other 9Mbit 18-bit synchronous SRAMs only after detailed electrical parameter comparison.