71V65803S133BG8

Overview

The 71V65803S133BG8 is a synchronous Single Data Rate (SDR) Zero Bus Turnaround (ZBT) Static Random Access Memory (SRAM) manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 9 Megabits, organized as 512K words by 18 bits. The device supports a maximum clock frequency of 133 MHz with an access time of 4.2 nanoseconds. It operates within a supply voltage range of 3.135V to 3.465V and is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 mm.

Feature Summary

• Supports high-speed parallel data transfer via a ZBT interface architecture
• Utilizes synchronous SDR technology for precise timing control
• Designed for surface-mount installation on printed circuit boards

Applications

• High-performance embedded memory systems
• Industrial equipment requiring fast data buffering
• Network infrastructure components

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements as the specific part may not meet current environmental standards. Validate package dimensions against existing PCB footprints before integration into new designs.

Selection Notes

Evaluate system timing constraints against the 4.2 ns access specification. Ensure power supply stability within the 3.135V to 3.465V operating window. Consider thermal management capabilities for the PBGA package in enclosed environments.

Part Context

This component belongs to the 71V65803 series of high-density SRAM devices. It shares architectural similarities with other members of the family but differs in speed grade and packaging configuration. The series targets applications demanding reliable, low-latency volatile memory storage solutions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation.