71V65803S133BGG

Overview

The 71V65803S133BGG is a synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 9 megabits, organized as 512 kilowords by 18 bits. The device operates with a maximum clock frequency of 133 MHz and features a typical access time of 4.2 nanoseconds. It utilizes a parallel interface and requires a supply voltage ranging from 3.135 volts to 3.465 volts. The component is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14 by 22 millimeters. It supports an operating temperature range from 0 degrees Celsius to 70 degrees Celsius.

Feature Summary

• Supports high-speed synchronous operation at frequencies up to 133 MHz for efficient data throughput.
• Utilizes zero bus turnaround (ZBT) technology to minimize wait states during bidirectional data transfers.
• Features pipelined architecture to maintain high performance across sequential memory accesses.
• Includes dedicated byte write controls for precise management of individual data bytes within the word structure.

Applications

• High-performance networking equipment requiring fast packet buffering
• Industrial automation systems needing reliable real-time data storage
• Telecommunications infrastructure utilizing synchronous data processing
• Embedded control units demanding low-latency memory access

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm RoHS compliance requirements as standard versions may not meet current environmental regulations. Check moisture sensitivity level handling procedures before assembly. Ensure pin compatibility with existing PCB footprints. Review datasheet revisions for any substrate or labeling changes affecting integration.

Selection Notes

Evaluate system timing constraints against the 4.2 ns access specification. Compare power consumption profiles with alternative SRAM families. Assess physical space limitations regarding the 119-PBGA footprint dimensions. Consider thermal dissipation capabilities within the target enclosure. Verify voltage regulator stability within the specified 3.135 V to 3.465 V range.

Part Context

This component belongs to the 71V65803 family of synchronous ZBT SRAMs. It shares architectural similarities with other members like the 71V65803S100BG but offers higher clock speeds. The series is designed for applications requiring dense, fast memory solutions. It complements microcontroller-based systems by providing extended scratchpad memory. The PBGA package facilitates surface-mount assembly in compact designs.

Replacement Considerations

Publicly confirmed substitute part numbers are not available for this specific variant. The manufacturer has declared this product obsolete. Designers should evaluate newer generations of SRAM or alternative memory technologies. Cross-reference pinouts carefully if considering similar speed grades from other manufacturers. Verify electrical characteristics match original design requirements.