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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:512K x 18
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:4.2 ns
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Overview
The 71V65803S133BGG8 is a synchronous single data rate static random access memory integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 9 megabits, organized as 512 kilowords by 18 bits. The device operates with a maximum clock frequency of 133 MHz and features an access time of 4.2 nanoseconds. It utilizes a parallel interface and requires a supply voltage ranging from 3.135 volts to 3.465 volts. The component is housed in a 119-pin plastic ball grid array package measuring 14 by 22 millimeters.
Feature Summary
- Supports high-speed synchronous operation at frequencies up to 133 MHz for efficient data throughput.
- Features a wide 18-bit data bus architecture suitable for complex data processing applications.
- Incorporates zero wait state burst read capabilities to optimize system performance.
Applications
- High-performance networking equipment requiring fast buffer memory
- Industrial control systems utilizing real-time data processing
- Telecommunications infrastructure components
Procurement Notes
Verify the specific suffix BGG8 against official Renesas documentation to confirm the tape and reel packaging configuration. Confirm RoHS3 compliance status as indicated in recent product change notifications. Check for end-of-life notices or alternative package options if current stock availability is limited. Ensure compatibility with existing board layouts regarding the 119-pin PBGA footprint.
Selection Notes
Select this component when a 9-megabit synchronous SRAM with an 18-bit width is required. The 133 MHz speed grade offers low latency for demanding digital signal processing tasks. Consider the 119-pin BGA package for dense board designs where surface mount technology is preferred over leaded packages. Verify thermal requirements against the specified operating temperature range.
Part Context
This part belongs to the IDT 71V65803 family of synchronous ZBT SRAMs. It shares architectural similarities with other members like the 71V65803S133BGI8 but differs in packaging and environmental compliance specifications. The family is designed for applications needing high-density memory with fast access times in a compact form factor.
Replacement Considerations
The 71V65803S133BQI is listed as a similar replacement option. Verify pinout compatibility and electrical characteristics before substitution. Other variants within the 71V65803 series may offer different packaging or speed grades.
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