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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:512K x 18
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:4.2 ns
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Overview
The 71V65803S133BGGI is a synchronous single data rate zero bus turnaround SRAM manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 9 megabits organized as 512K words by 18 bits. The device operates with a maximum clock frequency of 133 MHz and features a typical access time of 4.2 nanoseconds. It requires a supply voltage range between 3.135 volts and 3.465 volts. The component is housed in a 119-pin plastic ball grid array package measuring 14 by 22 millimeters. It supports surface mount installation and functions within an ambient temperature range of negative 40 degrees Celsius to positive 85 degrees Celsius.
Feature Summary
- Supports high-speed parallel data transfer via synchronous interface architecture
- Enables rapid data retrieval through zero bus turnaround technology
- Maintains stable operation across extended industrial temperature ranges
Applications
- High-performance networking equipment requiring fast buffer memory
- Industrial control systems needing reliable real-time data storage
- Telecommunications infrastructure utilizing synchronous processing
Procurement Notes
Verify the specific suffix BGGI confirms the 119-PBGA package and industrial temperature grade. Confirm RoHS compliance status as some variants may differ. Check for end-of-life notices or production change notifications affecting substrate or labeling. Ensure compatibility with existing board layouts regarding pinout and thermal requirements before ordering.
Selection Notes
Select this part when a 9-megabit capacity with 18-bit word width is required. Choose based on the need for 133 MHz synchronous performance with low latency. Consider the 119-ball BGA footprint for space-constrained designs. Verify that the operating voltage aligns with the system's 3.3-volt rail specifications.
Part Context
This component belongs to the 71V65803 family of synchronous SRAM devices. It shares core architectural similarities with other members like the 71V65803S133BG, differing primarily in packaging and temperature rating. The series is designed for applications demanding high bandwidth and deterministic timing characteristics in embedded memory solutions.
Replacement Considerations
Public confirmed substitute part numbers are not available.
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