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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:512K x 18
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:4.2 ns
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Overview
The 71V65803S133BQ is a 9Mbit synchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a parallel interface with a memory organization of 512K x 18 bits. The device operates at a clock frequency of 133 MHz and has an access time of 4.2 ns. It utilizes SDR (ZBT) technology and is housed in a 165-CABGA package measuring 13x15 mm. The supply voltage range is 3.135V to 3.465V, and it supports an operating temperature range of -40°C to 85°C.
Feature Summary
- Supports high-speed data transfer via a parallel interface synchronized with the system clock.
- Integrates registers for data I/O, address, and control signals to manage large data volumes efficiently.
- Utilizes Zero Bus Turnaround (ZBT) technology to minimize wait states during bus turnaround periods.
Applications
- High-performance computing systems requiring fast memory access
- Network infrastructure equipment
- Industrial automation controllers
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status as indicated in official documentation. Check for end-of-life notices or obsolescence schedules prior to procurement. Ensure packaging specifications match design requirements. Validate technical parameters against current datasheets before integration.
Selection Notes
Select this component for applications demanding high-speed synchronous memory with parallel connectivity. Consider the 165-CABGA package size for board layout constraints. Evaluate thermal performance within the specified operating temperature range. Compare access times and clock frequencies against system timing requirements. Assess power consumption characteristics relative to available supply voltage ranges.
Part Context
This SRAM belongs to the 71V65803 family, which includes variants with different speeds and packages. It is designed for applications requiring reliable, high-speed volatile memory storage. The device complements other components in complex electronic systems where data throughput is critical.
Replacement Considerations
The 71V65803S133BQI is listed as a similar alternative part number from Renesas Electronics Corporation. Verify pin compatibility and electrical specifications before substitution.
FAQ
What is the memory organization of the 71V65803S133BQ?
The memory organization is 512K x 18 bits.
Does the 71V65803S133BQ support ZBT technology?
Yes, it utilizes Synchronous SDR (ZBT) technology.
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