71V65803S133BQG8

71V65803S133BQG8

$17.12
  • Description:IC SRAM 9MBIT PARALLEL 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:13b38266f652 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 9MBIT PARALLEL 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:9Mbit
  • Memory Organization:512K x 18
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-TBGA
  • Supplier Device Package:165-CABGA (13x15)
  • Access Time:4.2 ns

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71V65803S133BQG8

Overview

The 71V65803S133BQG8 is a 9-Mbit synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It utilizes Zero Bus Turnaround (ZBT) technology to eliminate dead bus cycles during read-write transitions. The device features a parallel interface with a maximum clock frequency of 133 MHz and an access time of 4.2 ns. It is organized as 512K x 18 bits and operates within a supply voltage range of 3.135V to 3.465V. The component is housed in a 165-pin CBGA package measuring 15x13 mm, suitable for surface-mount installation.

Feature Summary

  • Zero Bus Turnaround (ZBT) architecture eliminates dead bus cycles between read and write operations
  • Synchronous Single Data Rate (SDR) interface supporting burst mode data transfer
  • Integrated address, data-in, and control signal registers for pipeline efficiency
  • Flow-through output configuration without additional output data registers

Applications

  • High-speed data buffering in telecommunications equipment
  • Cache memory implementation in industrial control systems
  • Data storage in network infrastructure hardware
  • Temporary data holding in embedded processing applications

Procurement Notes

Verify the specific suffix BQG8 against official Renesas documentation to confirm pinout compatibility and package dimensions. Confirm RoHS compliance status as legacy variants may differ from current production standards. Check for End-of-Life notices or Product Change Notifications that may affect long-term availability. Ensure design-in approval aligns with current manufacturing guidelines.

Selection Notes

Select this component when zero bus turnaround latency is critical for system throughput. Compare against standard synchronous SRAMs if bus turnaround time impacts overall performance requirements. Verify that the 18-bit word width matches the target data bus architecture. Ensure the CBGA package footprint fits the available PCB real estate constraints.

Part Context

This part belongs to the 71V65803 family of high-performance ZBT SRAMs. It shares architectural similarities with other members like the 71V65803S133BG but differs in packaging and termination specifications. The family is designed for applications requiring fast, deterministic memory access times without the overhead of traditional synchronous pipelines.

FAQ

Does the 71V65803S133BQG8 include output data registers?

No, the device features a flow-through output configuration and does not contain output data registers.

What is the organization of the memory array?

The memory is organized as 512K words by 18 bits.

71V65803S133BQG871V65803S133BQG8
$17.12
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