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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:512K x 18
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:4.2 ns
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Overview
The 71V65803S133BQI is a synchronous single data rate zero bus turnaround SRAM manufactured by Renesas Electronics Corporation. It features a 9 Mbit storage capacity organized as 512K x 18 bits. The device supports parallel interface operations at a maximum clock frequency of 133 MHz with an access time of 4.2 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and is rated for an industrial temperature range of -40°C to 85°C. The component is housed in a 165-CABGA package measuring 13x15 mm.
Feature Summary
- Supports synchronous single data rate operation with zero bus turnaround capability for efficient data transfer.
- Provides high-speed parallel memory interface suitable for demanding processing applications.
- Operates reliably across a wide industrial temperature range from -40°C to 85°C.
Applications
- High-performance embedded systems requiring fast random access memory
- Network infrastructure equipment utilizing parallel SRAM interfaces
- Industrial control systems operating in extended temperature environments
Procurement Notes
Verify the specific suffix BQI corresponds to the 165-CABGA package and industrial temperature grade when sourcing. Confirm RoHS compliance status, as documentation indicates non-compliance for this variant. Check current manufacturing status, as availability may be limited or subject to long lead times. Ensure compatibility with existing board layouts regarding the 13x15 mm footprint and pin configuration.
Selection Notes
Select this component when a 9 Mbit synchronous SRAM with 133 MHz performance is required. Compare against the 71V65803S100BQI if lower speed but similar packaging is acceptable. Consider the 71V65803S133BGI8 only if PBGA packaging is feasible, noting its discontinued status. Verify that the 3.3V I/O levels match the system logic requirements.
Part Context
This part belongs to the IDT 71V65803 family of synchronous ZBT SRAMs. It serves as a successor to earlier generations like the 71V65903 series, offering improved speed and reliability. The device is designed for applications needing large block memory with low latency. Renesas continues to support this line for legacy and specialized industrial designs.
Replacement Considerations
The 71V65803S100BQI is listed as a verified alternative substitute. Both parts share the same 165-CABGA package and 9 Mbit organization. The primary difference is the clock frequency, with the S100 variant operating at 100 MHz compared to the 133 MHz of the S133 variant.
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