71V65803S133BQI8

Overview

The 71V65803S133BQI8 is a synchronous single data rate zero bus turnaround SRAM manufactured by Renesas Electronics Corporation. It features a 9 Mbit storage capacity organized as 512K x 18 bits. The device supports parallel interfaces with a maximum clock frequency of 133 MHz and an access time of 4.2 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and functions at temperatures between -40°C and 85°C. The component is housed in a 165-CABGA package measuring 13x15 mm.

Feature Summary

• Supports high-speed synchronous operation with zero bus turnaround for efficient data transfer
• Provides reliable volatile memory storage with 9 Mbit capacity
• Compatible with standard 3.3 V I/O logic levels

Applications

• High-performance computing systems requiring fast data buffering
• Network infrastructure equipment needing low-latency memory
• Industrial control systems demanding wide temperature stability

Procurement Notes

Verify the specific suffix BQI8 against official Renesas documentation to confirm package type and pinout compatibility. Confirm RoHS status, as this variant may not meet current environmental standards. Check for active production status or obsolescence notices before finalizing procurement plans.

Selection Notes

Select this component when system requirements demand 133 MHz synchronous performance with 18-bit data width. Ensure the design accommodates the 165-CABGA footprint and thermal characteristics. Validate that the operating environment stays within the specified -40°C to 85°C range for optimal reliability.

Part Context

This part belongs to the 71V65803 family of synchronous SRAMs. It shares architectural similarities with other variants like the 71V65803S133BQI but differs in packaging and specific manufacturing revisions. The family is designed for applications requiring high-speed parallel memory access.

Replacement Considerations

The 71V65803S133BQI is listed as a potential substitute. Verify pin compatibility and electrical specifications before substitution.