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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:512K x 18
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:4.2 ns
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Overview
The Renesas Electronics Corporation 71V65803S133PFG is a 9 Mbit Synchronous ZBT SRAM organized as 512K x 18. It operates with a maximum clock frequency of 133 MHz and features a typical access time of 4.2 ns. The device supports a supply voltage range from 3.135 V to 3.465 V, with a maximum power consumption current of 195 mA. It utilizes a parallel interface and is housed in a 100-TQFP (14x14) surface-mount package. The component functions within an operating temperature range of 0°C to +70°C.
Feature Summary
- Supports synchronous single data rate (SDR) operations with zero wait state burst access capabilities.
- Integrates a pipelined output architecture for high-speed data throughput.
- Includes a dedicated burst counter for managing sequential memory accesses.
Applications
- High-performance embedded systems requiring fast local memory buffering
- Network infrastructure equipment needing low-latency data storage
- Industrial control units utilizing synchronous bus interfaces
Procurement Notes
Verify the specific suffix PFG against official Renesas documentation to confirm the 100-TQFP package and commercial temperature grade. Confirm RoHS compliance status through the latest datasheet revision, as manufacturing changes may affect regulatory markings. Check for end-of-life notices or production change notifications prior to finalizing procurement plans.
Selection Notes
Select this component when a 512K x 18 organization is required for synchronous applications. Ensure the design accommodates the 3.3V I/O logic levels and the 100-pin TQFP footprint. Compare performance metrics against alternative speeds if higher clock frequencies are necessary for the target system architecture.
Part Context
This part belongs to the IDT 71V65803 family of Synchronous ZBT SRAMs. These devices are designed for applications demanding high bandwidth and low latency. The family typically includes variations in speed grades and packaging options, maintaining consistent functional characteristics across the series.
Replacement Considerations
Consult official substitution guides for compatible parts such as the 71V65803S133BGI8, which shares similar electrical specifications but differs in packaging type.
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