71V65803S133PFGI

71V65803S133PFGI

$19.69
  • Description:IC SRAM 9MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:652604b9dd48 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 9MBIT PARALLEL 100TQFP
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:9Mbit
  • Memory Organization:512K x 18
  • Memory Interface:Parallel
  • Clock Frequency:133 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:100-LQFP
  • Supplier Device Package:100-TQFP (14x14)
  • Access Time:4.2 ns

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71V65803S133PFGI

Overview

The 71V65803S133PFGI is a synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 9 megabits, organized as 512K words by 18 bits. The device supports parallel interface operations with a maximum clock frequency of 133 MHz and features an access time of 4.2 nanoseconds. It operates within a supply voltage range of 3.135 volts to 3.465 volts and is housed in a 100-pin Thin Quad Flat Package (TQFP) measuring 14x14 millimeters. The component is rated for industrial operating temperatures ranging from -40°C to +85°C.

Feature Summary

  • Supports high-speed synchronous parallel data transfer at frequencies up to 133 MHz
  • Provides 9-megabit storage density via a 512K x 18 bit organization structure
  • Operates reliably across the full industrial temperature range of -40°C to +85°C

Applications

  • High-performance embedded systems requiring fast data buffering
  • Industrial equipment control units needing reliable volatile memory
  • Network infrastructure hardware utilizing parallel bus architectures

Procurement Notes

Verify the specific suffix PFGI to confirm the 100-TQFP package and industrial temperature rating. Confirm RoHS3 compliance status through official documentation prior to integration. Check current production status as availability may vary. Ensure voltage levels match the 3.135V to 3.465V requirement for proper operation.

Selection Notes

Select this component when a 9Mb capacity with 18-bit word width is required for synchronous applications. Compare against the 71V65603 series if a 36-bit organization is needed instead. Consider the 133 MHz speed limit and 4.2 ns access time against system timing constraints. Verify that the 100-pin TQFP footprint fits the target PCB layout design.

Part Context

This part belongs to the 71V65803 family of zero-bus-turnaround (ZBT) synchronous SRAMs. It serves as a high-density memory solution for systems requiring rapid data access without wait states. The family offers scalability in terms of speed grades and organizational formats while maintaining compatible pinouts for many legacy designs.

Replacement Considerations

The 71V65603S133PFGI is a documented alternative within the same family, offering identical speed and package but with a 256K x 36 bit organization. Verify electrical compatibility and software adaptation requirements before substituting.

71V65803S133PFGI71V65803S133PFGI
$19.69
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