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Product Detailed Parameters
- Description:IC SRAM 9MBIT PAR 150MHZ 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:512K x 18
- Memory Interface:Parallel
- Clock Frequency:150 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:3.8 ns
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Overview
The Renesas 71V65803S150BGI8 is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a 9 Mbit storage capacity organized as 512K x 18 bits. The device supports a maximum clock frequency of 150 MHz with a typical clock-to-data access time of 3.8 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and is housed in a 119-pin PBGA package measuring 14x22 mm.
Feature Summary
- Supports high-performance system speeds through synchronous parallel interface architecture
- Provides fast data retrieval with specified clock-to-data access timing
- Designed for reliable operation across industrial temperature ranges
Applications
- High-speed data handling in FPGA systems
- Buffering applications requiring rapid parallel data access
- Embedded systems utilizing synchronous SRAM interfaces
Procurement Notes
Verify component authenticity and datasheet alignment before procurement. Confirm package integrity and pin compatibility with target PCB layouts. Check for RoHS compliance status as indicated in official documentation. Ensure supply chain sources provide valid traceability records for this specific part number.
Selection Notes
Select this component when a 512K x 18 organization is required for synchronous parallel memory applications. Consider the 150 MHz speed grade and 3.8 ns access time for high-throughput designs. Evaluate the 119-pin PBGA footprint against available board space and thermal management requirements.
Part Context
This part belongs to the IDT71V65803 family of synchronous SRAM devices. It shares architectural similarities with other variants in the series, differing primarily in speed grades and packaging options. The device represents a solution for dense, high-speed memory buffering in complex electronic systems.
Replacement Considerations
Consult official substitution guides for compatible alternatives. Verify electrical parameters and pinout compatibility before replacing.
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