71V65803S150BQ

Overview

The IDT71V65803S150BQ is a 9Mb synchronous static random-access memory (SRAM) manufactured by Renesas Electronics Corporation. It utilizes Zero Bus Turnaround (ZBT) technology to achieve high-speed parallel data transfer with a maximum clock frequency of 150 MHz and an access time of 3.8 ns. The device features a 256K x 36 bit organization, supporting wide data interfaces for demanding applications. It operates within a supply voltage range of 3.135V to 3.465V and is housed in a 165-CABGA package measuring 13x15 mm.

Feature Summary

• Employs ZBT SRAM architecture to eliminate bus turnaround latency during read-to-write transitions.
• Supports pipelined burst operations for continuous high-throughput data streaming.
• Integrates on-chip phase-locked loop (PLL) circuitry for internal clock generation and synchronization.

Applications

• High-performance networking equipment requiring low-latency packet buffering
• Telecommunications infrastructure systems utilizing wide data buses
• Industrial automation controllers needing fast real-time data processing

Procurement Notes

Verify component authenticity through authorized channels as this part may be obsolete or subject to lifecycle changes. Confirm specific suffix codes match exact speed grades and packaging requirements. Check for RoHS compliance status variations across manufacturing dates. Ensure ESD handling protocols are followed due to moisture sensitivity level 3 classification. Validate pinout compatibility with existing PCB layouts before integration.

Selection Notes

Select this component when system architecture demands wide 36-bit data paths combined with sub-4ns access speeds. Compare against standard SDR alternatives if power consumption is critical, as ZBT devices typically draw higher current during active bursts. Ensure the host controller supports the required synchronous interface timing parameters. Verify that the 165-ball BGA footprint aligns with available assembly capabilities and thermal management strategies.

Part Context

This device belongs to the IDT 71V65803 family of high-performance synchronous SRAMs. It represents a specialized segment of memory solutions designed for bandwidth-intensive applications where traditional asynchronous memories fail to meet throughput requirements. The product line emphasizes reliability and deterministic timing characteristics essential for mission-critical industrial and communication systems.

Replacement Considerations

Consult official Renesas documentation for qualified substitute part numbers. Verify functional equivalence regarding pin configuration, voltage levels, and timing specifications before substitution. Cross-reference datasheets to ensure compatible package dimensions and thermal characteristics for direct replacement scenarios.

FAQ

What is the primary advantage of ZBT technology over standard SDR SRAM?

ZBT technology eliminates the turnaround time between read and write cycles, allowing for significantly higher effective data throughput compared to standard single-data-rate SRAMs.

Does this device include internal clock generation?

Yes, the IDT71V65803S150BQ integrates an on-chip phase-locked loop (PLL) to generate internal clocks from the external input signal.