71V65803S150BQG

Overview

The IDT71V65803S150BQG is a 9 Mbit synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a parallel interface and operates at a maximum clock frequency of 150 MHz with a typical access time of 3.8 ns. The device utilizes a 3.3 V power supply, ranging from 3.135 V to 3.465 V. It is housed in a 165-pin CABGA package measuring 13x15 mm. The memory organization is specified as 256K x 36 bits. The component is designed for surface mount installation and supports an industrial operating temperature range of -40°C to +85°C.

Feature Summary

• Supports high-speed synchronous data transfer via a parallel interface with a 150 MHz clock capability.
• Provides dense 9 Mbit storage capacity organized in a 256K x 36 bit configuration.
• Operates within a standard 3.3 V voltage supply range suitable for industrial environments.

Applications

• High-performance embedded systems requiring fast data buffering
• Industrial equipment control units
• Network infrastructure hardware

Procurement Notes

Verify the specific suffix BQG against official Renesas documentation to confirm the exact package type and temperature grade. Confirm RoHS compliance status, as older batches may not meet current environmental standards. Check for end-of-life notifications or product change notices that may affect long-term availability. Ensure the supplier provides valid traceability documents for critical industrial applications.

Selection Notes

Select this component when a wide data bus width of 36 bits is required alongside high-speed synchronous operation. Compare against the 512K x 18 variants if narrower interfaces are acceptable. Verify that the 165-pin CABGA footprint matches the target PCB design constraints. Ensure the system power supply can maintain stability within the 3.135 V to 3.465 V window during peak current draw.

Part Context

This part belongs to the IDT 71V65803 family of synchronous SRAMs. It shares architectural similarities with other members like the 71V65803S150PFI8 but differs in package and pinout. The family is characterized by zero wait-state burst capabilities and low power consumption modes. It serves as a high-density memory solution for applications demanding rapid data access speeds.

Replacement Considerations

Consult official Renesas substitution guides for verified equivalents. Cross-reference pinouts and electrical characteristics carefully before replacing. Generic SRAMs are not direct substitutes due to specific synchronous control signal requirements.