71V65803S150BQI

Overview

The IDT71V65803S150BQI is a 9Mbit synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It utilizes a Zero Bus Turnaround (ZBT) Single Data Rate (SDR) parallel interface architecture. The device features a storage organization of 512K words by 18 bits, providing high-density data retention capabilities within a compact footprint. It operates with a maximum clock frequency of 150 MHz and achieves a typical access time of 3.8 ns. The component is designed for a supply voltage range of 3.135V to 3.465V. It is housed in a 165-pin Ceramic Ball Grid Array (CABGA) package with dimensions of 13mm x 15mm. The device supports an industrial operating temperature range from 0°C to 70°C.

Feature Summary

• Supports high-speed data transfer via a 150 MHz synchronous parallel interface with Zero Bus Turnaround technology to minimize bus turnaround latency.
• Provides reliable volatile memory storage with a 9Mbit capacity organized as 512K x 18 bits for complex data handling applications.
• Ensures stable operation across a standard industrial temperature range with defined voltage supply requirements.

Applications

• High-performance embedded systems requiring fast buffer memory
• Network infrastructure equipment utilizing parallel SRAM interfaces
• Industrial control systems needing reliable volatile data storage

Procurement Notes

Verify the specific suffix BQI against official Renesas documentation to confirm pinout compatibility and package dimensions. Confirm that the 165-CABGA form factor matches the target PCB layout constraints. Check current production status as legacy components may have limited availability or require alternative sourcing strategies. Ensure voltage levels align with system power rails before integration.

Selection Notes

Select this component when a 9Mbit capacity with 18-bit word width is required for synchronous parallel applications. The 3.8 ns access time suits designs demanding low-latency data retrieval at 150 MHz. Consider the 165-pin CABGA package size for board space limitations. Verify thermal management capabilities for the 0°C to 70°C operating range in the final enclosure design.

Part Context

This part belongs to the IDT 71V65803 family of ZBT SRAM devices. It shares architectural similarities with other members like the IDT71V65803S150PFI8, differing primarily in package type and pin count. The family is characterized by high-speed parallel interfaces and robust performance for buffering and caching tasks in digital logic systems.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Consult Renesas Electronics for current obsolescence notices and recommended replacement strategies.