71V65803S150BQI8

71V65803S150BQI8

$18.72
  • Description:IC SRAM 9MBIT PAR 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:871c630bef95 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 9MBIT PAR 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:9Mbit
  • Memory Organization:512K x 18
  • Memory Interface:Parallel
  • Clock Frequency:150 MHz
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:-40°C ~ 85°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-TBGA
  • Supplier Device Package:165-CABGA (13x15)
  • Access Time:3.8 ns

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71V65803S150BQI8

Overview

The IDT71V65803S150BQI8 is a 9Mbit synchronous static random access memory (SRAM) manufactured by Renesas Electronics Corporation. It features a parallel interface and operates at a maximum clock frequency of 150 MHz with a 3.8 ns clock-to-data access time. The device is organized as 512K x 18 bits and requires a supply voltage between 3.135V and 3.465V. It is housed in a 165-ball CBGA package, supports surface mount installation, and functions within an operating temperature range of -40°C to +85°C.

Feature Summary

  • Supports high-performance system speeds up to 150MHz
  • Eliminates dead bus cycles during read/write transitions
  • Combines low power consumption with high-speed CMOS technology

Applications

  • High-speed data handling systems
  • FPGA configuration and control applications
  • Parallel memory interfaces requiring fast turnaround

Procurement Notes

Verify the specific suffix BQI8 against official Renesas documentation to confirm the CBGA-165 package and industrial temperature grade. Confirm RoHS compliance status as some sources indicate non-compliance. Check current production status, as this component may be discontinued or subject to long lead times. Ensure the 512K x 18 organization matches your design requirements rather than the alternative 256K x 36 configuration.

Selection Notes

Select this component for designs requiring 9Mbit capacity with synchronous parallel access. It is suitable for applications needing fast bus turnaround without dead cycles. Compare against the IDT71V65803S150PFI8 if a TQFP package is preferred over CBGA. Ensure the 3.3V supply rail stability meets the 3.135V to 3.465V specification. Verify thermal management capabilities for the -40°C to +85°C operating range.

Part Context

This part belongs to the 71V65803 series of 3.3V CMOS SRAMs from Renesas. The series offers multiple memory organizations including 512K x 18 and 256K x 36. The S150 suffix denotes the 150MHz speed grade. These devices are designed for high-performance embedded systems requiring reliable, fast volatile memory storage with synchronous interface timing.

Replacement Considerations

IDT71V65803S150PFI8: Same electrical specifications but uses a 100-TQFP package instead of CBGA. Verify pin compatibility and board layout changes.

71V65803S150BQI871V65803S150BQI8
$18.72
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