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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 100TQFP
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:512K x 18
- Memory Interface:Parallel
- Clock Frequency:150 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:3.8 ns
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Overview
The IDT71V65803S150PFG is a 9Mb (512K x 18) synchronous ZBT SRAM manufactured by Renesas Electronics Corporation. It operates at a clock frequency of 150 MHz with an access time of 3.8 ns. The device utilizes a 100-TQFP (14x14) surface-mount package and requires a supply voltage between 3.135V and 3.465V. It supports parallel interface communication and functions within a temperature range of -40°C to 85°C.
Feature Summary
- Supports high-performance system speeds through zero wait state burst operations
- Features internally synchronized output buffer enable to eliminate external OE control
- Includes individual byte write control for precise data masking
Applications
- High-speed data buffering in telecommunications equipment
- Cache memory implementation in network routers
- Signal processing systems requiring low-latency access
Procurement Notes
Verify component authenticity due to discontinued status. Confirm RoHS compliance requirements as the specific part may not meet current environmental standards. Validate package dimensions against PCB footprint specifications before integration into final assembly designs.
Selection Notes
Select this component for applications requiring 150 MHz synchronous operation with pipelined outputs. Ensure design compatibility with 3.3V logic levels and verify thermal management capabilities for the TQFP-100 package under maximum operating temperatures.
Part Context
This part belongs to the IDT71V65803 family of 3.3V Synchronous ZBT SRAMs. It shares architectural similarities with variants like the IDT71V65803S100PFG8 but offers higher clock speed performance. The series is designed for embedded memory applications needing fast read/write cycles without dead states.
Replacement Considerations
Consider IDT71V65803S100PFG8 for lower speed requirements or IDT71V65802S133PFG8 for alternative pinout configurations. Verify electrical parameters and package compatibility when substituting with other members of the 71V65xxx series.
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