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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:512K x 18
- Memory Interface:Parallel
- Clock Frequency:150 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:3.8 ns
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Overview
The IDT71V65803S150PFG8 is a synchronous single data rate zero bus turnaround SRAM manufactured by Renesas Electronics Corporation. It provides a storage capacity of 9 Mbit organized as 512K x 18 bits. The device operates with a maximum clock frequency of 150 MHz and features an access time of 3.8 ns. It utilizes a parallel interface and requires a supply voltage between 3.135 V and 3.465 V. The component is housed in a 100-TQFP (14x14) surface-mount package and supports an operating temperature range from -40°C to 85°C.
Feature Summary
- Supports high-speed synchronous operation at up to 150 MHz for efficient data throughput.
- Features zero bus turnaround architecture to minimize latency during read-to-write transitions.
- Provides 9 Mbit density within a compact 100-pin thin quad flatpack package.
Applications
- High-performance embedded systems requiring fast memory access
- Industrial equipment control units
- Telecommunications infrastructure hardware
Procurement Notes
Verify the exact suffix PFG8 against official Renesas documentation to confirm pinout and electrical specifications, as variations exist within the family. Confirm RoHS compliance status, as specific variants may not meet current environmental directives. Check for end-of-life notices or production discontinuation announcements prior to finalizing procurement plans.
Selection Notes
Select this component when a 18-bit wide data path is required alongside synchronous timing constraints. Ensure the design accommodates the specified 3.3 V nominal supply voltage range. Verify that the thermal management strategy supports the industrial temperature grade limits defined for the TQFP-100 package.
Part Context
This part belongs to the IDT 71V65803 series of synchronous SRAMs. It shares architectural similarities with other members like the S100 and S133 variants but offers higher speed performance. The series is designed for applications demanding low-latency memory solutions in complex digital systems.
Replacement Considerations
Consult official substitution guides for compatible parts such as the IDT71V65803S100PFG8 or IDT71V65803S133BG. Verify pin compatibility and timing parameters before replacing the component in existing designs.
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