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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 100TQFP
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:512K x 18
- Memory Interface:Parallel
- Clock Frequency:150 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:3.8 ns
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Overview
The IDT 71V65803S150PFGI is a 9Mbit Synchronous Zero Bus Turnaround (ZBT) SRAM. It operates at a clock frequency of up to 150 MHz with a cycle time of 3.8 ns. The device features a 18-bit data width and utilizes a 3.3V supply voltage range of 3.135V to 3.465V. It is housed in a 100-pin TQFP package measuring 14x14 mm and supports an operating temperature range from -40°C to 85°C.
Feature Summary
- True zero bus turnaround capability eliminates read-write conflicts for continuous high-speed data transfer
- Synchronous architecture ensures precise timing alignment via a single clock input
- CMOS technology provides low power consumption while maintaining high performance
Applications
- High-speed cache memory systems
- Network switching equipment buffers
- Telecommunications signal processing units
Procurement Notes
Verify the specific suffix PFGI confirms the 100-TQFP package and industrial temperature grade. Confirm the manufacturer source is Integrated Device Technology or its authorized successors, such as Renesas, to ensure component authenticity and traceability. Check for RoHS compliance markings on the packaging documentation.
Selection Notes
Select this component when synchronous ZBT performance is required over standard asynchronous SRAMs. Ensure the system design accommodates the 3.3V logic levels and the 100-pin footprint. Consider the 150 MHz maximum frequency against the target application's bandwidth requirements and thermal dissipation capabilities within the specified temperature range.
Part Context
This part belongs to the IDT 71V65803 series of synchronous ZBT SRAMs. These devices are designed to bridge the speed gap between processors and slower memory technologies. The series offers high-density storage with fast access times, making it suitable for embedded applications requiring reliable volatile memory solutions.
Replacement Considerations
Check for cross-reference parts within the IDT/Renesas portfolio that share the same pinout and electrical specifications. Verify compatibility with existing board layouts before substituting.
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