71V65903S80BG

71V65903S80BG

$18.50
  • Description:IC SRAM 9MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray

SKU:e00eafab15ae Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 9MBIT PARALLEL 119PBGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tray
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:9Mbit
  • Memory Organization:512K x 18
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:119-BGA
  • Supplier Device Package:119-PBGA (14x22)
  • Access Time:8 ns

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71V65903S80BG

Overview

The Renesas 71V65903S80BG is a synchronous static random-access memory (SRAM) integrated circuit belonging to the ZBT family. It features a storage capacity of 9 Megabits, organized as 512K words by 18 bits. The device utilizes a parallel interface with an access time of 8 nanoseconds and operates on a single 3.3V power supply within a voltage range of 3.135V to 3.465V. It is housed in a 119-pin Plastic Ball Grid Array (PBGA) package measuring 14x22 millimeters.

Feature Summary

  • Zero Bus Turnaround (ZBT) technology eliminates dead bus cycles during read-to-write or write-to-read transitions.
  • Synchronous Single Data Rate (SDR) architecture registers address, data-in, and control signals for precise timing.
  • Flow-through output configuration provides immediate data availability without additional output register latency.

Applications

  • High-performance embedded systems requiring fast data buffering
  • Network infrastructure equipment demanding low-latency memory access
  • Industrial automation controllers utilizing synchronous logic interfaces

Procurement Notes

Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm RoHS compliance status as specific manufacturing lots may vary. Check for End-of-Life notices or obsolescence warnings before finalizing procurement plans. Ensure proper electrostatic discharge handling protocols are followed during storage and assembly processes.

Selection Notes

Select this component when zero bus turnaround performance is critical for system throughput. Compare against asynchronous alternatives if lower cost outweighs speed requirements. Verify that the 18-bit data width aligns with the target processor's bus architecture. Ensure the PBGA package footprint matches the printed circuit board design constraints.

Part Context

This part belongs to the IDT 71V65903 series of high-speed synchronous SRAMs. The series is designed for applications requiring high bandwidth and deterministic timing. It shares architectural similarities with other ZBT devices but offers specific pinout and density configurations tailored for complex digital signal processing tasks.

Replacement Considerations

  • 71V65903S80BGG8

71V65903S80BG71V65903S80BG
$18.50
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