71V65903S80BGI

Overview

The Renesas Electronics Corporation 71V65903S80BGI is a synchronous static random-access memory (SRAM) integrated circuit belonging to the ZBT family. It features a storage capacity of 9 Megabits, organized as 512K words by 18 bits. The device utilizes a parallel interface with an access time of 8 nanoseconds and operates on a single 3.3-volt power supply within a voltage range of 3.135 to 3.465 volts. It is housed in a 119-pin plastic ball grid array (PBGA) package measuring 14x22 millimeters.

Feature Summary

• Zero bus turnaround architecture eliminates dead cycles during read-to-write or write-to-read transitions.
• On-chip registers for address, data-in, and control signals enable high-speed synchronous operation.
• Flow-through output configuration provides immediate data availability without additional latency.

Applications

• High-performance embedded systems requiring fast data buffering
• Network infrastructure equipment needing low-latency memory
• Industrial automation controllers with strict timing requirements

Procurement Notes

Verify component authenticity through authorized channels due to potential counterfeit risks. Confirm RoHS compliance status as legacy variants may differ. Check moisture sensitivity level handling requirements before assembly. Ensure voltage levels match system specifications strictly.

Selection Notes

Select this model when zero bus turnaround performance is critical for system throughput. Compare against asynchronous alternatives if lower power consumption at idle is prioritized over speed. Verify package compatibility with existing PCB footprints and reflow profiles.

Part Context

This component is part of the IDT 71V65903 series, designed for applications demanding high bandwidth and deterministic access times. It serves as a direct replacement for older asynchronous SRAMs in designs where bus turnaround latency impacts overall system efficiency.

Replacement Considerations

Consult official documentation for verified cross-references. Ensure pinout and electrical characteristics match exactly to avoid redesign.