71V65903S80BGI8

Overview

The Renesas 71V65903S80BGI8 is a 9Mbit synchronous, SDR (ZBT) SRAM memory IC. It features an 8 ns access time and operates on a 3.3V supply voltage within the range of 3.135V to 3.465V. The device is organized as 512K x 18 bits and utilizes a parallel interface. It is housed in a 119-PBGA (14x22) surface-mount package. The component supports an operating temperature range of 0°C to 70°C.

Feature Summary

• Eliminates dead bus cycles during read-to-write or write-to-read transitions
• Provides high-speed parallel data transfer via ZBT interface
• Operates with standard 3.3V power supply requirements

Applications

• High-performance embedded systems requiring fast memory access
• Network infrastructure equipment
• Industrial control applications

Procurement Notes

Verify current availability status as this part may be subject to obsolescence notices. Confirm RoHS compliance details for specific manufacturing lots. Ensure the 119-PBGA footprint matches your PCB design constraints. Check for official replacement recommendations from Renesas if discontinuation is confirmed.

Selection Notes

Select this component when a 9Mbit capacity with 512K x 18 organization is required. The 8 ns access time suits applications needing rapid data retrieval. Ensure the system design accommodates the 119-PBGA package size and thermal characteristics. Verify that the 3.3V logic levels align with the host processor interface.

Part Context

This device belongs to the 71V65903 family of synchronous SRAMs. It shares architectural similarities with other members like the 71V65803 series but differs in speed grade and packaging options. The ZBT technology distinguishes it from traditional asynchronous SRAMs by improving throughput efficiency.

Replacement Considerations

Consult Renesas documentation for officially confirmed substitute part numbers. Generic equivalents are not recommended due to specific timing and organizational requirements.