71V65903S80BQ8

71V65903S80BQ8

$17.12
  • Description:IC SRAM 9MBIT PARALLEL 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)

SKU:c23330e1ed66 Category: Brand:

  
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Product Detailed Parameters

  • Description:IC SRAM 9MBIT PARALLEL 165CABGA
  • Series:-
  • Mfr:Renesas Electronics Corporation
  • Package:Tape & Reel (TR)
  • Memory Type:Volatile
  • Memory Format:SRAM
  • Technology:SRAM - Synchronous, SDR (ZBT)
  • Memory Size:9Mbit
  • Memory Organization:512K x 18
  • Memory Interface:Parallel
  • Clock Frequency:-
  • Write Cycle Time - Word, Page:-
  • Voltage - Supply:3.135V ~ 3.465V
  • Operating Temperature:0°C ~ 70°C (TA)
  • Mounting Type:Surface Mount
  • Package / Case:165-TBGA
  • Supplier Device Package:165-CABGA (13x15)
  • Access Time:8 ns

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71V65903S80BQ8

Overview

The IDT71V65903S80BQ8 is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It belongs to the ZBT (Zero Bus Turnaround) family, offering a total storage capacity of 9 Megabits organized as 512K words by 18 bits. The device features a parallel interface with an access time of 8 nanoseconds and operates on a single 3.3V power supply within a voltage range of 3.135V to 3.465V. It is housed in a 165-pin CABGA package measuring 13x15 mm. The component supports data hold times during address transitions and includes output disable capabilities for bus sharing.

Feature Summary

  • Synchronous operation utilizing a single clock edge for data input and output transfer
  • Zero bus turnaround capability allowing continuous high-speed data transfers without wait states
  • Independent byte write control enabling selective modification of specific data bytes
  • Output disable function to isolate the memory bus when the chip is not selected

Applications

  • High-performance computing systems requiring fast buffer memory
  • Network infrastructure equipment such as routers and switches
  • Industrial automation controllers needing rapid data logging
  • Telecommunications base stations for signal processing buffers

Procurement Notes

Verify the exact suffix BQ8 against official Renesas documentation to confirm pinout and electrical specifications, as suffixes often denote specific packaging or temperature grades. Confirm RoHS compliance status and moisture sensitivity level requirements for your assembly process. Check for end-of-life notices or last-time-buy alerts directly from the manufacturer before finalizing procurement plans.

Selection Notes

Select this component when system architecture demands synchronous SRAM with zero bus turnaround latency. Ensure the design accommodates the 165-pin CABGA footprint and thermal dissipation requirements. Verify that the host controller supports the required clock frequencies and voltage levels. Consider alternative packages if surface area constraints differ from the 13x15mm form factor.

Part Context

This part is part of the IDT 71V65903 series, which provides high-density synchronous SRAM solutions. The series is designed for applications requiring large buffer sizes with low latency. Renesas acquired IDT's memory assets, continuing support for these legacy high-performance parts. The 9Mb density balances cost and performance for mid-range buffering applications.

Replacement Considerations

Officially documented substitutes include the 71V65803S133BQI. Verify compatibility regarding access speed differences and pin configuration before substitution.

71V65903S80BQ871V65903S80BQ8
$17.12
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