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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:512K x 18
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:8 ns
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Overview
The Renesas 71V65903S80BQG8 is a synchronous static random-access memory (SRAM) integrated circuit belonging to the ZBT family. It provides a total storage capacity of 9 Megabits, organized as 512K words by 18 bits. The device features a parallel interface with an access time of 8 nanoseconds and operates within a supply voltage range of 3.135V to 3.465V. It is housed in a 165-pin CABGA package measuring 13x15mm.
Feature Summary
- Synchronous Single Data Rate architecture for high-speed data transfer
- Zero Bus Turnaround technology minimizes latency between read and write cycles
- Pipeline architecture enables efficient burst data handling
Applications
- High-performance embedded systems requiring fast local memory
- Industrial equipment control units
- Network infrastructure hardware
Procurement Notes
Verify component authenticity through authorized channels due to potential availability constraints. Confirm specific suffix designations match exact package and temperature requirements. Check current lifecycle status as this series may be subject to discontinuation notices. Ensure compatibility with existing PCB footprints and voltage levels before integration.
Selection Notes
Select this component when a 9Mb synchronous SRAM with 18-bit width is required. Compare against alternatives based on package dimensions and thermal characteristics. Ensure the system clock supports the specified access time. Verify that the operating temperature range meets environmental specifications.
Part Context
This part belongs to the IDT 71V65903 series of synchronous SRAMs manufactured by Renesas Electronics. The series is designed for applications demanding low power consumption and high reliability. It utilizes advanced CMOS technology to achieve performance levels suitable for complex digital signal processing tasks.
Replacement Considerations
- 71V65803S133BQI
FAQ
What is the memory organization of the 71V65903S80BQG8?
The memory is organized as 512K x 18 bits.
Does this device support burst mode operations?
Yes, the pipeline architecture supports burst data transfers.
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