71V65903S80PFGI8

Overview

The IDT71V65903S80PFGI8 is a 9Mb (512K x 18) synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics Corporation. It features a parallel interface with an access time of 8 ns and operates within a supply voltage range of 3.135V to 3.465V. The device is housed in a 100-TQFP (14x14) surface-mount package and supports an operating temperature range from -40°C to 85°C.

Feature Summary

• Synchronous Single Data Rate (SDR) architecture for high-speed data transfer
• Zero Bus Turnaround (ZBT) technology to eliminate wait states during direction changes
• Parallel interface supporting 18-bit data width

Applications

• High-performance computing systems requiring fast memory access
• Network infrastructure equipment
• Industrial control systems

Procurement Notes

Verify component authenticity through authorized Renesas distributors or certified partners. Confirm RoHS3 compliance and MSL level 3 handling requirements during storage and assembly. Check for obsolescence notices as this part may be subject to discontinuation. Ensure proper ESD protection protocols are followed during procurement, storage, and installation processes.

Selection Notes

Select this component when a 9Mb capacity with 18-bit data width is required. The 8 ns access time suits applications needing rapid data retrieval. Verify compatibility with 3.3V logic levels and ensure the 100-TQFP footprint fits the PCB layout constraints. Consider thermal management capabilities for the specified industrial temperature range.

Part Context

This SRAM belongs to the IDT 71V65903 family, designed for synchronous parallel memory applications. It integrates ZBT technology to optimize bus turnaround efficiency. The device is part of Renesas' broader portfolio of high-speed memory solutions, offering reliability for demanding electronic environments.

Replacement Considerations

IS61NLF51218A-7.5TQLI by ISSI is listed as a similar alternative.