71V65903S85BQ

Overview

The 71V65903S85BQ is a 9 Mbit synchronous static random-access memory (SRAM) organized as 512K x 18. It features an 8.5 ns access time and operates on a parallel interface with a maximum clock frequency of 87 MHz. The device supports a supply voltage range of 3.135 V to 3.465 V, with a maximum power current of 225 mA. It is housed in a 165-CABGA package and functions within a temperature range of 0°C to +70°C.

Feature Summary

• Synchronous Single Data Rate (SDR) architecture for high-speed data transfer
• Zero Bus Turnaround (ZBT) technology to eliminate dead bus cycles during read/write transitions
• Integrated address, data-in, and control signal registers for precise timing synchronization

Applications

• High-performance embedded systems requiring fast memory access
• Network infrastructure equipment
• Industrial automation controllers
• Telecommunications base stations

Procurement Notes

Verify component authenticity through authorized Renesas distributors. Confirm RoHS compliance status as the specific variant may not meet current environmental standards. Check for End-of-Life (EOL) notices or Production Change Notices (PCN) regarding manufacturing site changes or label updates before finalizing procurement plans.

Selection Notes

Select this component when a 512K x 18 organization is required with synchronous control. Ensure the design accommodates the 165-CABGA surface-mount package. Verify that the system logic supports ZBT protocols to utilize the zero turnaround feature effectively. Confirm voltage levels match the 3.3V nominal requirement.

Part Context

This part belongs to the 71V65903 series of ZBT SRAMs from Renesas Electronics. It shares architectural similarities with other members like the 71V65703 but differs in data width and organization. The series is designed for applications needing high throughput without complex asynchronous handshaking.

Replacement Considerations

The 71V65803S133BQI is listed as a similar replacement option by the manufacturer.