71V65903S85BQ

Overview

The IDT71V65903S85BQ is a 9Mb (512K x 18) Synchronous Zero Bus Turnaround (ZBT) SRAM manufactured by Integrated Device Technology. It operates with a supply voltage range of 3.135V to 3.465V and features an access time of 8.5 ns. The device utilizes a parallel interface and is housed in a 165-CABGA package measuring 13x15 mm. It supports high-performance system speeds up to 100 MHz, providing 7.5 ns clock-to-data access.

Feature Summary

• Zero Bus Turnaround architecture eliminates dead cycles between write and read operations
• Internally synchronized output buffer enable removes the need for external OE control
• Single R/W control pin simplifies interface logic requirements
• Supports 4-word burst capability in interleaved or linear modes

Applications

• High-speed data buffering in communication systems
• Cache memory applications in embedded processors
• Network switch and router packet storage
• Industrial control systems requiring fast random access

Procurement Notes

Verify component authenticity through authorized Renesas or IDT distributors. Confirm RoHS compliance status as some variants may not meet current environmental standards. Check for End-of-Life notices, as this specific part number has been marked obsolete in several major distribution channels. Ensure proper ESD handling procedures are followed during procurement and storage.

Selection Notes

Select this component when zero bus turnaround performance is critical for system throughput. The 512K x 18 organization suits applications requiring wide data paths. Consider the 165-CABGA package constraints for PCB layout. Verify that the 3.3V I/O levels match the host system voltage domains. Evaluate thermal dissipation requirements given the maximum supply current specifications under active load conditions.

Part Context

This device belongs to the 71V65903 family of synchronous ZBT SRAMs from IDT, now part of Renesas Electronics. The family includes variations such as the 71V65703 (256K x 36) and different speed grades like the S80 and S100 suffixes. These components were designed to bridge the gap between asynchronous SRAMs and faster synchronous memories, offering high density with simple interface protocols.

Replacement Considerations

Public confirmed substitute part numbers include IS61NLF51218A-7.5TQLI from ISSI. Other potential replacements within the same family may include the 71V65803 series variants, though pin compatibility and speed grades must be verified against the original design requirements.