— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:512K x 18
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:8.5 ns
Download product information
Overview
The Renesas Electronics Corporation 71V65903S85BQ8 is a 9-Mbit Synchronous Single Data Rate (SDR) Static Random Access Memory (SRAM). It features a memory organization of 512K x 18 bits and supports parallel interface operations. The device operates with an access time of 8.5 ns and a maximum clock frequency of 87 MHz. Power supply requirements range from 3.135 V to 3.465 V, with a maximum power current of 225 mA. It is housed in a 165-CABGA package measuring 13x15 mm and functions within a commercial temperature range of 0°C to +70°C.
Feature Summary
- Supports synchronous single data rate (SDR) operation for high-speed data transfer via parallel interface.
- Provides 9-Mbit storage capacity organized as 512K words by 18 bits.
- Operates at a maximum clock frequency of 87 MHz with an 8.5 ns access time.
Applications
- High-performance embedded systems requiring fast random access memory.
- Network infrastructure equipment utilizing parallel SRAM interfaces.
- Industrial control applications operating within commercial temperature ranges.
Procurement Notes
Verify component authenticity through authorized distributors or official manufacturer channels. Confirm the specific suffix BQ8 matches the required package and temperature specifications. Check for RoHS compliance status as indicated in official documentation. Ensure compatibility with existing system voltage levels ranging from 3.135 V to 3.465 V before integration.
Selection Notes
Select this component when a 9-Mbit synchronous SRAM with 18-bit word width is required. The 8.5 ns access time suits applications needing moderate-to-high speed data retrieval. The CABGA-165 package offers surface-mount convenience for dense PCB layouts. Verify that the 0°C to +70°C operating range meets environmental constraints.
Part Context
This part belongs to the 71V65903 series of Synchronous SDR SRAMs from Renesas Electronics. These devices are designed for applications demanding reliable, high-speed volatile memory solutions. The series typically utilizes standard 3.3V I/O logic levels and parallel bus architectures common in legacy and industrial electronic designs.
Replacement Considerations
Publicly confirmed substitute part numbers for this specific model were not identified in the provided source material.
ChipApex | Global Electronic Components Supplier









