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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 165CABGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:512K x 18
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:8.5 ns
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Overview
The IDT71V65903S85BQG is a 9Mb (256K x 36) synchronous static random-access memory IC manufactured by Renesas Electronics. It utilizes Zero Bus Turnaround (ZBT) technology to eliminate dead bus cycles during read-write transitions. The device operates with a maximum access time of 8.5 ns and supports a clock frequency up to 87 MHz. It functions within a supply voltage range of 3.135V to 3.465V and an ambient temperature range of -40°C to +85°C. The component is housed in a 165-CABGA package.
Feature Summary
- Zero Bus Turnaround (ZBT) architecture eliminates dead bus cycles between read and write operations.
- Flow-through output configuration provides data without additional output registers.
- Registers address, data-in, and control signals for synchronous operation.
- Supports burst mode providing four cycles of data for a single address.
Applications
- High-performance embedded systems requiring fast memory access
- Industrial equipment with strict timing constraints
- Automotive electronic control units
Procurement Notes
Verify the specific suffix BQG against official Renesas documentation to confirm the 165-CABGA package and industrial temperature grade. Confirm RoHS compliance status as historical records indicate variations across the 71V65903 series. Check current production status via authorized distributors, as this part number may be subject to end-of-life notices or obsolescence.
Selection Notes
Select this component when a 36-bit data width is required for high-speed parallel interfaces. Ensure the design accommodates the 3.3V I/O levels and the specific power consumption characteristics of ZBT SRAM. Verify that the system clock does not exceed the 87 MHz limit and that the PCB layout supports the 165-ball BGA footprint.
Part Context
This device belongs to the 71V65903 family of ZBT synchronous SRAMs. It shares architectural similarities with other members like the 71V65703 but differs in organization and speed grades. The family is designed for applications needing low-latency memory without the complexity of asynchronous logic.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material. Consult Renesas technical support for current alternatives if this component is discontinued.
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