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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 165CABGA
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:512K x 18
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:165-TBGA
- Supplier Device Package:165-CABGA (13x15)
- Access Time:8.5 ns
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Overview
The IDT71V65903S85BQG is a 9 Megabit Synchronous ZBT SRAM organized as 512K x 18. It operates with a 3.3V core supply and supports high-performance system speeds up to 100 MHz, featuring an 8.5 ns clock-to-data access time. The device utilizes a 165-ball fine pitch ball grid array (fBGA) package. Key electrical characteristics include a single R/W control pin, four-word burst capability, and individual byte write controls. The architecture eliminates dead bus cycles between read and write operations through internal synchronization.
Feature Summary
- Zero Bus Turnaround (ZBT) technology eliminates dead cycles during bus turnaround between read and write operations
- Internally synchronized output buffer enable removes the requirement for external Output Enable (OE) control
- Single Read/Write control pin simplifies interface logic compared to traditional dual-pin configurations
- Four-word burst capability supports both interleaved and linear burst modes for efficient data transfer
Applications
- High-speed cache memory systems requiring low latency
- Network routing equipment and switching fabrics
- Telecommunications infrastructure base stations
- Industrial automation controllers with synchronous memory requirements
Procurement Notes
Verify the specific suffix BQG corresponds to the 165-CABGA package and RoHS compliance status. Confirm the manufacturer source is Integrated Device Technology or authorized successor entities such as Renesas. Ensure the component matches the 8.5 ns speed grade and 3.3V I/O specifications required by the target design. Cross-reference the datasheet revision to confirm pinout compatibility with existing PCB layouts.
Selection Notes
Select this component when system architecture demands synchronous SRAM with zero wait states between read and write transitions. The 512K x 18 organization suits applications requiring wide data paths without excessive pin counts. The fBGA package offers density advantages for space-constrained designs. Consider the 3.3V I/O level compatibility with the host processor's voltage domain before integration.
Part Context
This part belongs to the IDT 71V65 series of Synchronous ZBT SRAMs. The series includes variants with different organizations such as 256K x 36 and packages like TQFP-100 or BGA-119. The 71V65903 variant specifically targets the 512K x 18 configuration. The 'S85' designation indicates the 8.5 ns speed grade within the product family.
Replacement Considerations
Compatible substitutes include IDT71V65903S85PFG (TQFP-100 package) and IDT71V65903S85BG (BGA-119 package). Verify package dimensions and pin mapping differences before substitution. Other family members like IDT71V65702 share functional similarities but differ in organization.
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