71V65903S85PFG

Overview

The Renesas Electronics Corporation 71V65903S85PFG is a 9 Mbit ZBT SRAM with a memory organization of 512K x 18. It features an 8.5 ns access time and operates on a 3.3 V power supply within the range of 3.135 V to 3.465 V. The device utilizes a parallel interface and is housed in a 100-pin TQFP package measuring 14 x 20 mm. It supports synchronous SDR operation with a maximum clock frequency of 90 MHz.

Feature Summary

• Flow-through architecture for continuous data output
• Single R/W control pin simplifies interface logic
• Internally synchronized output buffer enable eliminates OE control requirements

Applications

• High-performance system speed applications
• Parallel memory expansion systems
• Embedded storage requiring flow-through outputs

Procurement Notes

Verify component authenticity through official Renesas channels or authorized distributors. Confirm RoHS compliance status as documentation indicates variations across manufacturing sites. Check for end-of-life notices, as specific suffixes may be discontinued. Validate moisture sensitivity level (MSL 3) handling requirements during assembly.

Selection Notes

Select this part for designs requiring 512K x 18 bit density with synchronous burst capabilities. Ensure voltage compatibility with 3.3 V I/O standards. Consider the 100-TQFP package dimensions for PCB layout constraints. Verify that the 8.5 ns access time meets system timing requirements compared to faster alternatives.

Part Context

This component belongs to the IDT 71V65 series of 3.3V Synchronous ZBT SRAMs. The series includes variants with different organizations such as 256K x 36. These devices are designed for high-speed data buffering and caching in digital systems, offering low power consumption and simple interface protocols.

Replacement Considerations

IDT71V65903S85BG is a documented alternative with similar specifications but in a PBGA-119 package.