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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:512K x 18
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:8.5 ns
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Overview
The Renesas 71V65903S85PFG8 is a synchronous Single Data Rate (SDR) Zero Bus Turnaround (ZBT) Static Random Access Memory (SRAM) integrated circuit. It provides a total storage capacity of 9 Megabits, organized as 512K words by 18 bits. The device features a parallel interface with an access time of 8.5 nanoseconds and operates within a supply voltage range of 3.135 to 3.465 volts. It is housed in a 100-lead Thin Quad Flatpack (TQFP) package measuring 14x14 millimeters.
Feature Summary
- Supports high-speed data transfer via Zero Bus Turnaround technology for efficient bus utilization
- Utilizes synchronous clocked architecture for precise timing control
- Designed for low power consumption during active and standby operations
Applications
- High-performance computing systems requiring fast memory access
- Network infrastructure equipment such as routers and switches
- Industrial automation controllers and signal processing units
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance status and moisture sensitivity level prior to soldering. Check for specific packaging variations that may affect handling requirements. Ensure the part number suffix matches the required pin configuration and temperature rating for your design.
Selection Notes
Select this component when a 9Mb synchronous SRAM with ZBT support is required. Compare access times and package dimensions against alternative designs. Consider the operating temperature range and voltage specifications relative to system constraints. Evaluate pin compatibility if replacing existing legacy memory solutions.
Part Context
This device belongs to the IDT 71V65903 family of synchronous SRAMs. It shares architectural similarities with other members like the 71V65703 and 71V65803 series, differing primarily in speed grades and package options. The product line is designed for applications demanding reliable, high-bandwidth memory performance.
Replacement Considerations
Public confirmed substitute part numbers include IS61NLF51218A-7.5TQLI from Integrated Silicon Solution Inc.
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