— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 100TQFP
- Series:-
- Mfr:IDT, Integrated Device Technology Inc
- Package:Bulk
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:512K x 18
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:8.5 ns
Download product information
Overview
The IDT71V65903S85PFGI is a 9Mb (512K x 18) synchronous ZBT SRAM manufactured by Renesas Electronics. It features an 8 ns access time and operates on a 3.3V supply voltage within the 3.135V to 3.465V range. The device utilizes a parallel interface and is housed in a 100-TQFP (14x14) surface-mount package. It supports a maximum clock frequency of 90 MHz and functions within an operating temperature range of -40°C to 85°C.
Feature Summary
- Zero wait state burst counter architecture eliminates dead cycles between write and read operations
- Internally synchronized output buffer enable removes the need for external OE control
- Single R/W control pin simplifies interface logic requirements
- Supports individual byte write capabilities via BW1-BW4 control signals
Applications
- High-performance embedded systems requiring fast data buffering
- Network infrastructure equipment utilizing parallel memory interfaces
- Industrial control applications with extended temperature requirements
Procurement Notes
Verify the specific suffix PFGI against official Renesas documentation to confirm package dimensions and lead finish specifications. Confirm RoHS compliance status as manufacturing sites may vary. Check for active production status or obsolescence notices, as this component family has undergone lifecycle changes. Ensure compatibility with existing PCB footprints for the 100-TQFP form factor before procurement.
Selection Notes
Select this component when a 512K x 18 organization is required for synchronous parallel memory applications. The 8 ns access time suits high-speed data processing tasks. Consider the 100-TQFP package for surface-mount assembly constraints. Verify that the single R/W pin architecture aligns with the system's control line availability compared to devices requiring separate read/write pins.
Part Context
This part belongs to the IDT 71V65903 series of 3.3V Synchronous ZBT SRAMs. The series includes variants with different memory organizations such as 256K x 36. The ZBT technology distinguishes these devices from traditional asynchronous SRAMs by providing pipeline-like performance without wait states. The product line is now managed under Renesas Electronics following industry acquisitions.
Replacement Considerations
IS61NLF51218A-7.5TQLI by ISSI is documented as a similar alternative.
ChipApex | Global Electronic Components Supplier








