— IC芯片 | 连接器 | 传感器 | 被动器件 —
Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR (ZBT)
- Memory Size:9Mbit
- Memory Organization:512K x 18
- Memory Interface:Parallel
- Clock Frequency:-
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:8.5 ns
Download product information
Overview
The IDT71V65903S85PFGI8 is a synchronous static random-access memory (SRAM) integrated circuit manufactured by Renesas Electronics. It provides a total storage capacity of 9 megabits, organized as 512K words by 18 bits. The device features a parallel interface with an access time of 8.5 nanoseconds and operates within a supply voltage range of 3.135 to 3.465 volts. It supports data rates up to 87 MHz and functions across an industrial temperature range from -40°C to +85°C. The component is housed in a 100-pin Thin Quad Flat Package measuring 14x14 millimeters.
Feature Summary
- Supports Zero Bus Transition (ZBT) technology for reduced power consumption during data transitions
- Utilizes single data rate (SDR) architecture for efficient data transfer operations
- Features flow-through output structure for high-speed system integration
Applications
- High-performance embedded systems requiring fast local memory
- Network infrastructure equipment such as routers and switches
- Industrial control systems operating in extended temperature environments
Procurement Notes
Verify the specific suffix PFGI8 against official Renesas documentation to confirm package type and RoHS compliance status. Confirm current production status as end-of-life notices may apply to this specific variant. Ensure compatibility with existing board layouts for the 100-TQFP footprint before procurement.
Selection Notes
Select this component when a 9Mb synchronous SRAM with 18-bit width is required. The 8.5 ns access time suits applications needing moderate speed with low power characteristics. Consider the 100-pin TQFP package constraints for PCB space. Verify that the 3.3V nominal supply aligns with the system voltage rails.
Part Context
This part belongs to the IDT 71V65xxx series of synchronous ZBT SRAMs. These devices are designed to replace asynchronous memories in high-speed digital designs. The series offers various access times and package options to fit different performance and form factor requirements in telecommunications and computing markets.
Replacement Considerations
Publicly confirmed substitute part numbers include IS61LF51218A-7.5TQLI from Integrated Silicon Solution Inc.
ChipApex | Global Electronic Components Supplier









