71V67602S133BGG

Overview

The 71V67602S133BGG is a synchronous single data rate static random-access memory integrated circuit manufactured by Renesas Electronics Corporation. It features a total storage capacity of 9 megabits organized as 256 kilobytes by 36 bits. The device supports a maximum clock frequency of 133 MHz with an access time of 4.2 nanoseconds. It operates within a supply voltage range of 3.135 volts to 3.465 volts and is housed in a 119-pin plastic ball grid array package measuring 14 by 22 millimeters.

Feature Summary

• Supports parallel interface for high-speed data transfer
• Utilizes synchronous single data rate architecture
• Designed for surface mount installation

Applications

• High-performance computing systems requiring fast memory access
• Network infrastructure equipment
• Industrial control applications

Procurement Notes

Verify component authenticity through authorized channels due to end-of-life status. Confirm package integrity and moisture sensitivity level handling procedures before assembly. Cross-reference datasheet revisions to ensure compatibility with existing design specifications. Validate supplier documentation against official Renesas records.

Selection Notes

Evaluate system requirements against the 9-megabit capacity and 36-bit word width. Ensure power supply stability within the specified voltage range. Consider thermal management for the BGA package in enclosed environments. Verify timing constraints match the 4.2-nanosecond access specification.

Part Context

This component belongs to the 71V67602 series of synchronous SRAM devices. It shares architectural similarities with other variants in the family but differs in packaging and speed grade. The 119-PBGA form factor distinguishes it from TQFP or other BGA options available in the same product line.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material.