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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:4.2 ns
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Overview
The Renesas Electronics Corporation 71V67602S133PFG8 is a synchronous Single Data Rate (SDR) Static Random Access Memory (SRAM) integrated circuit. It features a storage capacity of 9 Mbit organized as 256K x 36 bits. The device supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. It operates on a supply voltage range of 3.135 V to 3.465 V and is housed in a 100-TQFP (14x14) surface-mount package. The component is rated for an operating temperature range of -40°C to 85°C.
Feature Summary
- Supports high-speed parallel data transfer via a synchronous SDR interface architecture.
- Integrates a wide 36-bit data bus organization suitable for complex memory mapping requirements.
- Operates within a standard 3.3 V power supply specification for system compatibility.
Applications
- High-performance embedded systems requiring fast random access memory.
- Industrial control units needing extended temperature range operation.
- Telecommunications infrastructure equipment utilizing parallel SRAM interfaces.
Procurement Notes
Verify the specific suffix PFGI8 against official Renesas documentation to confirm pinout and package dimensions, as variations exist within the family. Confirm end-of-life status through authorized channels prior to design finalization. Ensure voltage levels match the 3.135 V to 3.465 V requirement strictly. Check for moisture sensitivity handling instructions relevant to the TQFP packaging type during assembly.
Selection Notes
Select this component when a 36-bit wide data path is required alongside synchronous timing constraints. Compare against the 71V67603 series if different organizational structures are needed. Ensure the design environment accommodates the specified industrial temperature range. Verify that the 100-pin TQFP footprint aligns with the target PCB layout constraints.
Part Context
This part belongs to the Renesas 71V67602 family of synchronous ZBT SRAMs. These devices are designed for applications demanding low latency and high throughput. The family typically includes variants with different capacities and organizations, sharing common interface protocols and timing characteristics defined by the manufacturer's specifications.
Replacement Considerations
Consult official substitution guides for equivalent parts from Renesas or IDT. Verify functional compatibility regarding voltage, speed, and pin configuration before considering alternatives.
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