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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:133 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:4.2 ns
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Overview
The Renesas Electronics Corporation 71V67602S133PFGI is a synchronous single data rate (SDR) static random-access memory integrated circuit. It provides a storage capacity of 9 Mbit organized as 256k x 36 bits. The device supports a maximum clock frequency of 133 MHz with an access time of 4.2 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and functions at temperatures between -40°C and +85°C. The component is housed in a 100-TQFP package.
Feature Summary
- Supports high-speed parallel interface for synchronous data transfer
- Provides wide 36-bit data bus width for efficient system integration
- Operates reliably across extended industrial temperature ranges
Applications
- High-performance embedded systems requiring fast memory access
- Industrial control equipment with harsh environmental demands
- Network infrastructure hardware utilizing parallel SRAM interfaces
Procurement Notes
Verify the specific suffix PFGI against official datasheets to confirm the 100-TQFP package and industrial temperature grade. Confirm RoHS compliance status through current manufacturer documentation, as regulatory statuses may change. Check for end-of-life notifications or production discontinuation notices prior to finalizing procurement plans to ensure long-term supply stability.
Selection Notes
Select this component when a 36-bit wide data path is required for parallel processing applications. Ensure the design accommodates the 3.3 V power supply requirements and the thermal constraints of the TQFP-100 package. Compare performance metrics against alternative SDR SRAM devices if higher clock speeds or different organizational structures are needed for the target application architecture.
Part Context
This part belongs to the Renesas 71V67602 series of synchronous SRAMs. It shares architectural similarities with other members like the 71V67603 but differs in organization and speed grades. The product line targets applications needing reliable, high-bandwidth memory solutions within the RX microcontroller ecosystem and general-purpose parallel memory controllers.
Replacement Considerations
Publicly confirmed substitute part numbers are not available in the provided source material.
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