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Product Detailed Parameters
- Description:IC SRAM 9MBIT PAR 150MHZ 119PBGA
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:150 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:119-BGA
- Supplier Device Package:119-PBGA (14x22)
- Access Time:3.8 ns
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Overview
The IDT71V67602S150BGG8 is a synchronous single data rate static random access memory integrated circuit manufactured by Renesas Electronics Corporation. It provides a total storage capacity of 9 megabits, organized as 256 kilowords by 36 bits. The device operates with a maximum clock frequency of 150 MHz and features an access time of 3.8 nanoseconds. It utilizes a parallel interface and is housed in a 165-pin Ceramic Ball Grid Array package measuring 13 by 15 millimeters. The component supports a supply voltage range of 3.135 volts to 3.465 volts and functions within an ambient temperature range of 0 degrees Celsius to 70 degrees Celsius.
Feature Summary
- Supports high-speed synchronous data transfer via a single data rate parallel interface for efficient system integration.
- Provides wide data bus width capability through a 36-bit organization structure suitable for complex processing architectures.
- Ensures reliable operation within standard commercial temperature limits using a robust ceramic ball grid array package.
Applications
- High-performance computing systems requiring fast buffer memory
- Network infrastructure equipment utilizing parallel data buses
- Industrial control systems with strict timing requirements
Procurement Notes
Verify the specific suffix designation against official manufacturer documentation to confirm package type and material composition. Confirm current availability status as distribution channels may list obsolete or end-of-life inventory. Ensure compatibility with existing board layouts regarding pin definitions and thermal management requirements before finalizing procurement decisions.
Selection Notes
Select this component when a 36-bit wide data path is required alongside synchronous clocking capabilities. Compare performance metrics against alternative devices if lower power consumption or wider operating temperature ranges are necessary. Evaluate physical footprint constraints to ensure the 165-pin BGA package fits within the designated area on the printed circuit board assembly.
Part Context
This part belongs to the IDT71V67602 family of synchronous SRAMs designed for high-throughput applications. The family offers various speed grades and packaging options to accommodate different design needs. The S150 variant specifically targets systems requiring 150 MHz operation speeds while maintaining low latency characteristics essential for real-time data processing tasks.
Replacement Considerations
Consult official substitution guides for compatible alternatives such as the IDT71V67602S150BQG8 which shares similar electrical specifications but utilizes a different package configuration. Verify pin-to-pin compatibility and functional equivalence before implementing any replacement strategy.
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