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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tray
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:150 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:0°C ~ 70°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:3.8 ns
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Overview
The Renesas Electronics Corporation 71V67602S150PFG is a 9 Mbit synchronous single data rate (SDR) static random-access memory (SRAM) integrated circuit. It features a parallel interface with a memory organization of 256K x 36 bits. The device supports a maximum clock frequency of 150 MHz and offers an access time of 3.8 ns. It operates within a supply voltage range of 3.135 V to 3.465 V and is housed in a 100-pin TQFP package measuring 14x14 mm. The component is rated for commercial operating temperatures between 0°C and 70°C.
Feature Summary
- Supports high-speed synchronous data transfer at frequencies up to 150 MHz
- Provides wide 36-bit data bus width for efficient parallel processing
- Utilizes Single Data Rate (SDR) architecture for standard synchronous operation
Applications
- High-performance computing systems requiring fast buffer memory
- Network infrastructure equipment utilizing parallel SRAM interfaces
- Industrial control systems needing reliable volatile storage
Procurement Notes
Verify the specific suffix PFG to confirm the 100-TQFP package type and commercial temperature range. Confirm RoHS compliance status as legacy IDT parts may have varying environmental declarations. Check current availability as this component is listed as obsolete or end-of-life by the manufacturer. Ensure design-in compatibility with existing 3.3V logic levels and timing requirements.
Selection Notes
Select this part when a 36-bit wide synchronous SRAM interface is required for system buffering or caching. Compare against the 71V67602S133 variant if lower speed is acceptable, or the S150BGG variant if a BGA package is preferred. Ensure the host controller supports the 256K x 36 memory organization and can handle the 150 MHz clock domain constraints.
Part Context
This component belongs to the IDT 71V67602 family of synchronous SRAMs, now manufactured under the Renesas Electronics brand following the acquisition of Integrated Device Technology. The family is designed for applications demanding high-bandwidth memory access with low latency, serving as a bridge between processors and slower main memory subsystems.
Replacement Considerations
The 71V67602S133PFG is a similar pin-compatible alternative with a lower 133 MHz clock speed. The 71V67602S150BGG offers identical electrical performance but utilizes a 119-PBGA package instead of TQFP.
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