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Product Detailed Parameters
- Description:IC SRAM 9MBIT PARALLEL 100TQFP
- Series:-
- Mfr:Renesas Electronics Corporation
- Package:Tape & Reel (TR)
- Memory Type:Volatile
- Memory Format:SRAM
- Technology:SRAM - Synchronous, SDR
- Memory Size:9Mbit
- Memory Organization:256K x 36
- Memory Interface:Parallel
- Clock Frequency:150 MHz
- Write Cycle Time - Word, Page:-
- Voltage - Supply:3.135V ~ 3.465V
- Operating Temperature:-40°C ~ 85°C (TA)
- Mounting Type:Surface Mount
- Package / Case:100-LQFP
- Supplier Device Package:100-TQFP (14x14)
- Access Time:3.8 ns
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Overview
The Renesas Electronics Corporation 71V67602S150PFGI8 is a 9 Mbit Synchronous Single Data Rate (SDR) Static Random Access Memory (SRAM) integrated circuit. It features a memory organization of 256K x 36 bits and operates with a maximum clock frequency of 150 MHz. The device provides an access time of 3.8 ns and functions within a supply voltage range of 3.135 V to 3.465 V. It is housed in a 100-TQFP (14x14) surface-mount package and supports an operating temperature range from -40°C to +85°C.
Feature Summary
- Supports high-speed parallel data transfer via synchronous single data rate interface
- Provides wide 36-bit data bus width for efficient system integration
- Operates reliably across extended industrial temperature ranges
Applications
- High-performance networking equipment requiring fast buffer memory
- Industrial control systems demanding wide data buses
- Telecommunications infrastructure utilizing synchronous SRAM
Procurement Notes
Verify the specific suffix PFGI8 against official Renesas documentation to confirm the exact package type, lead finish, and temperature grade. Confirm current availability status as this component may be subject to discontinuation or lifecycle changes. Ensure compatibility with existing board designs regarding pinout and electrical specifications before procurement.
Selection Notes
Select this component when a 36-bit wide data path is required for synchronous memory applications. It is suitable for designs needing 150 MHz operation speeds within industrial temperature limits. Compare against other members of the 71V67602 family to ensure the specific package and speed grade match the system requirements.
Part Context
This part belongs to the Renesas 71V67602 series of Synchronous SDR SRAMs. These devices are designed for high-throughput applications requiring low latency and wide data interfaces. The series typically includes variants with different speeds, packages, and temperature ratings to support diverse embedded memory needs.
Replacement Considerations
Consult official Renesas substitution guides for verified alternatives. Cross-reference with similar parts in the 71V67602 family that share the same 256K x 36 organization and TQFP-100 package.
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